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Product Detailed Parameters
- Description：MOSFET N-CH 650V 35A D2PAK
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4895 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB110N65F is a surface-mount N-channel power MOSFET from onsemi's SuperFET II series. It features a 650V drain-source voltage rating and a continuous drain current of 35A at case temperature. The device exhibits a maximum on-resistance of 110 milliohms at 10V gate drive. Key electrical characteristics include a maximum gate charge of 145nC and an input capacitance of 4895pF. It operates within a junction temperature range of -55°C to 150°C and dissipates up to 357W in a TO-263 (D2PAK) package.
Feature Summary
- SuperFET II technology for optimized switching performance
- Low on-resistance for efficient conduction
- Enhanced avalanche ruggedness
- Lead-free finish with halide-free molding compound
Applications
- High-frequency power supplies
- Motor control applications
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation, as variations may exist. Confirm RoHS compliance status through manufacturer declarations. Ensure the selected package variant matches the intended PCB footprint requirements. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high-voltage isolation with low conduction losses. Evaluate thermal management capabilities given the 357W dissipation rating. Consider the gate charge specifications when designing driver circuits for optimal switching speeds. Verify that the operating voltage and current limits remain within the specified safe operating area under all load conditions.
Part Context
This part belongs to onsemi's FRFET and SuperFET II families, designed for high-efficiency power conversion. It utilizes advanced trench gate technology to minimize resistance while maintaining robust switching characteristics. The D2PAK package provides a balance between thermal performance and surface-mount convenience for industrial and consumer electronics.
Replacement Considerations
Consult official substitution lists for verified equivalents. NVB110N65S3F shares similar voltage and resistance ratings but differs in current capacity and series technology. Verify pinout compatibility and thermal characteristics before implementing any alternative components.
