FCB125N65S3

Overview

The FCB125N65S3 is an N-channel SuperFET III MOSFET from onsemi, housed in a surface-mount TO-263 (D2PAK) package. It features a drain-source voltage of 650 V and a continuous drain current of 24 A at case temperature. The device exhibits a maximum on-resistance of 105 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 49 nC, a threshold voltage range of 2.5 V to 4.5 V, and a power dissipation rating of 181 W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Utilizes SUPERFET III technology for low on-resistance and fast switching performance.
• Engineered with charge balance architecture to minimize gate charge and output capacitance.
• Designed for high dv/dt immunity to reduce electromagnetic interference risks.

Applications

• Telecommunications and server power supplies
• Industrial power conversion systems
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific suffix and package variant against the official datasheet to ensure compatibility with your PCB footprint and thermal requirements. Confirm that the component meets RoHS standards if required by your manufacturing process. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor junction.

Selection Notes

Select this component when a 650V rated N-channel MOSFET is required in a D2PAK package. The 105 mΩ on-resistance offers a balance between conduction loss and cost for medium-power applications. Consider the 24A current rating relative to your thermal management strategy. Verify that the gate charge characteristics align with your driver capabilities for optimal switching efficiency.

Part Context

This part belongs to the SUPERFET III family, which employs superjunction technology to achieve superior performance compared to traditional planar MOSFETs. The series is designed for high-efficiency power conversion, offering reduced switching losses and improved thermal stability. It represents an evolution in onsemi's high-voltage discrete power solutions.

Replacement Considerations

Direct substitutes may include FCP125N65S3R0 or FCMT125N65S3, though package differences exist. Verify pinout compatibility and thermal resistance values before substitution. Ensure that any alternative maintains the same voltage and current ratings to prevent circuit failure.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is typically ±30 V, as specified in standard datasheets for this voltage class.

Is this component suitable for automotive applications?

Standard documentation does not explicitly certify this specific part number for automotive use under AEC-Q101 standards; verify specific qualification status with the manufacturer.