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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO263AB
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：198mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：102 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：341W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB20N60-F085 is a SuperFET power MOSFET manufactured by onsemi. It features an N-channel configuration housed in a TO-263 (D2PAK) surface-mount package. The device supports a maximum drain-source voltage of 600 V and a continuous drain current of 20 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±30 V, a typical gate charge of 98 nC at 10 V, and a maximum power dissipation of 208 W. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- SuperFET technology for optimized switching performance
- Surface-mount D2PAK package design
- High voltage blocking capability
Applications
- Power supply circuits
- Motor control systems
- Industrial inverters
Procurement Notes
Verify the specific suffix against official documentation, as standard listings often use FCB20N60TM. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the ordering part number matches the required tape-and-reel or cut-tape packaging format specified in the datasheet before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust high-voltage handling in a compact surface-mount footprint. The SuperFET architecture offers advantages in switching efficiency compared to standard planar technologies. Evaluate thermal management requirements carefully, as the 208 W power dissipation rating depends on adequate heatsinking and case temperature conditions during operation.
Part Context
This device belongs to onsemi's SuperFET family, which utilizes trench gate and field plate technology to reduce conduction losses. It serves as a high-performance alternative to traditional planar MOSFETs in medium-power applications. The TO-263 package provides reliable thermal transfer capabilities for industrial and consumer electronics environments.
Replacement Considerations
The FCB20N60TM is the confirmed equivalent part number found in public distributor catalogs. Verify pinout compatibility and thermal characteristics when substituting.
