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Product Detailed Parameters
- Description：MOSFET N-CH 800V 4A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：880 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD1300N80Z is an N-Channel SuperFET® II MOSFET from onsemi, designed for high-voltage switching applications. It features a Drain-Source Voltage (Vds) of 800 V and a Continuous Drain Current (Id) of 4 A at case temperature. The device exhibits a maximum Drain-Source On-State Resistance (Rds(on)) of 1.3 ohms. Packaged in a surface-mount TO-252AA (DPAK) case style, it offers thermal performance rated at 52 W under case conditions.
Feature Summary
- Integrates SuperFET® II technology to optimize high-voltage switching efficiency.
- Provides robust 800 V blocking capability for demanding power circuits.
- Utilizes a compact TO-252AA surface-mount package for efficient board space utilization.
Applications
- High-voltage DC-DC converter designs
- Industrial motor control systems
- Uninterruptible Power Supply (UPS) units
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure component compatibility. Confirm that the TO-252AA package dimensions align with your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring 800 V isolation with moderate current handling capabilities around 4 A. Evaluate the 1.3 ohm Rds(on) against thermal management constraints to ensure the 52 W thermal rating supports your operational duty cycle without exceeding junction temperature limits.
Part Context
This part belongs to onsemi’s SuperFET® II family, which combines trench gate and field plate technologies to reduce switching losses. It serves as a discrete solution for medium-power applications where high voltage tolerance and reliable switching performance are critical design parameters.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains the 800 V rating, 4 A current capacity, and compatible TO-252AA pinout configuration to guarantee functional equivalence in existing designs.
