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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：32W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD3400N80Z is an N-channel SuperFET II power MOSFET from onsemi, utilizing superjunction charge balance technology. It features a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 2 A. The device has a typical on-resistance (Rds(on)) of 3.4 Ω at Vgs = 10 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 32 W of power. The component is housed in a TO-252AA (DPAK) surface-mount package with three pins.
Feature Summary
- Superjunction charge balance technology for optimized performance
- High breakdown voltage capability of 800 V
- Enhanced thermal stability with wide operating temperature range
Applications
- High-voltage switching circuits
- Power supply designs requiring high efficiency
- Industrial control systems
Procurement Notes
Verify the specific datasheet version and ordering suffixes to ensure compatibility with design requirements. Confirm that the TO-252AA package dimensions match the PCB footprint. Check for RoHS compliance status if required by regulatory standards. Ensure storage conditions adhere to moisture sensitivity levels specified in the manufacturer's documentation.
Selection Notes
Select this component when an 800 V rating is necessary for high-voltage applications. The 2 A current capacity suits low-to-medium power switching tasks. Consider the 3.4 Ω on-resistance for conduction loss calculations. The surface-mount DPAK package facilitates automated assembly and compact board layouts compared to through-hole alternatives.
Part Context
This part belongs to onsemi's SuperFET II series, which integrates advanced superjunction technology into standard packages. The series aims to reduce gate charge and output capacitance while maintaining robust avalanche ruggedness. It serves as a discrete solution for applications where integrated smart power ICs are not feasible or cost-effective.
Replacement Considerations
Direct substitutes must match the 800 V rating, N-channel configuration, and TO-252 package. Verify pinout compatibility and thermal characteristics before substitution.
