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Product Detailed Parameters
- Description：MOSFET N-CH 600V 3.9A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD4N60TF is a single N-channel Power MOSFET from onsemi's SuperFET family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 3.9A at 25°C. The device exhibits a maximum on-resistance of 1 Ohm at Vgs=10V and a typical gate charge of 16.6nC. Packaged in a DPAK-3 (TO-252-3) surface-mount case, it supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 50W.
Feature Summary
- SuperFET technology utilizes an advanced charge balance mechanism to minimize conduction loss and provide superior switching performance.
- Optimized for system miniaturization and higher efficiency in AC/DC power conversion switching mode operations.
- Capable of withstanding extreme dv/dt rates and higher avalanche energy levels.
Applications
- AC/DC power conversion
- Switching mode power supplies
- System miniaturization designs
Procurement Notes
Verify the specific suffix 'TF' against official onsemi documentation to confirm exact packaging configuration, as standard listings may reference 'TM'. Ensure the component matches the TO-252-3 package profile and SuperFET specifications. Confirm RoHS compliance status through the manufacturer's latest material declaration before procurement.
Selection Notes
Select this component for applications requiring a balance of low on-resistance and fast switching speeds in a compact SMD footprint. The 600V rating suits general-purpose high-voltage circuits. Evaluate thermal management requirements given the 50W dissipation limit in the DPAK package. Compare gate charge characteristics against alternative SuperFET variants for optimal driver compatibility.
Part Context
This part belongs to the FCD4N60 series within onsemi's SuperFET portfolio. The series is characterized by proprietary charge balance technology aimed at reducing both conduction and switching losses. The FCD4N60TF shares core electrical parameters with other members like the FCD4N60TM, differing primarily in tape-and-reel packaging specifications.
Replacement Considerations
Direct substitutes include the FCD4N60TM from onsemi, which shares identical electrical characteristics and pinout. Verify that any replacement maintains the SuperFET architecture to ensure equivalent switching behavior and avalanche ruggedness in existing circuit designs.
