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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4.6A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD5N60TM-WS is a single N-channel Power MOSFET from onsemi's SUPERFET family, housed in a DPAK (TO-252) surface-mount package. It features a 600 V drain-source voltage rating and a continuous drain current of 4.6 A at case temperature. The device exhibits a maximum on-resistance of 950 mΩ and supports a gate-source voltage range of ±30 V. With a typical gate charge of 16 nC and low effective output capacitance, it is designed for efficient switching performance in power conversion applications.
Feature Summary
- SUPERFET technology enabling low on-resistance and fast switching characteristics
- Easy Drive capability with reduced gate charge for simplified driver requirements
- High breakdown voltage rated for robust operation in high-voltage environments
Applications
- High-frequency DC-DC converters
- Power factor correction circuits
- Isolated flyback transformer drivers
Procurement Notes
Verify the specific suffix 'WS' to confirm tape-and-reel packaging configuration. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design. Cross-reference the datasheet revision date to confirm compliance with current manufacturing standards and material declarations.
Selection Notes
Select this component when a 600 V rating is required with moderate current handling capabilities. The DPAK package offers a balance between thermal performance and board space efficiency. Consider the 950 mΩ on-resistance for conduction loss calculations and verify that the gate drive voltage aligns with the specified threshold and maximum limits.
Part Context
This device belongs to onsemi's SUPERFET series, which integrates advanced trench gate technology to optimize the trade-off between conduction losses and switching speed. The FCD5N60TM-WS variant specifically targets cost-sensitive applications requiring reliable high-voltage switching without the complexity of discrete gate drive solutions.
Replacement Considerations
Direct substitutes include the FCD5N60 and FDD5N60NZTM, though pinout compatibility and specific electrical tolerances must be verified against the original design requirements before implementation.
