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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4.6A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD5N60TM is an N-channel SuperFET high-voltage super-junction MOSFET manufactured by onsemi. It utilizes charge balance technology to achieve low ON-resistance and reduced switching losses. The device features a breakdown voltage of 650 V, a continuous drain current of 4.6 A at case temperature, and a power dissipation rating of 54 W at case temperature. Key electrical parameters include a rise time of 40 ns and a fall time of 22 ns. It is housed in a surface-mount TO-252AA package.
Feature Summary
- Utilizes SuperFET charge balance technology for optimized performance
- Provides low ON-resistance characteristics
- Designed for lower switching losses
Applications
- High-frequency power conversion circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm that the component matches the required thermal management specifications for the intended application environment. Cross-reference the datasheet revision date to ensure compatibility with design requirements.
Selection Notes
Select this component for applications requiring high-voltage handling with efficient switching capabilities. The SuperFET architecture offers advantages in efficiency compared to conventional planar technologies. Ensure the operating conditions remain within the specified safe operating area limits defined in the manufacturer's datasheet.
Part Context
This part belongs to the SuperFET family from onsemi, which integrates advanced super-junction MOSFET technology. The series is designed to improve power density and efficiency in various electronic systems. The FCD5N60TM specifically targets high-voltage applications where low conduction and switching losses are critical for system performance.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.
