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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7.4A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD600N60Z is a single N-Channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. The device features a drain-source breakdown voltage of 650 V and supports a continuous drain current of 7.4 A. Its maximum drain-source on-resistance is 600 mOhms. The gate threshold voltage is specified at 3.5 V, with a total gate charge of 20 nC. Operating temperatures range from -55 C to +150 C junction temperature, with a power dissipation rating of 89 W.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance.
- Features an ESD-protected gate structure for enhanced reliability.
- Includes a built-in body diode for inductive load applications.
Applications
- High-frequency power conversion circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate datasheet revisions against specific manufacturing lot codes. Cross-reference ordering suffixes to confirm exact package and tape specifications.
Selection Notes
Evaluate thermal management requirements based on the 89 W power dissipation limit. Compare gate charge characteristics against driver capabilities for efficiency optimization. Assess package thermal resistance for adequate heat sinking in the target application. Verify voltage ratings exceed peak circuit transients to prevent breakdown.
Part Context
This component belongs to the SuperFET II family, which combines low on-resistance with fast switching speeds. The DPAK-3 package provides a compact solution for surface-mount designs requiring robust power handling. It serves as a discrete alternative to integrated power modules in medium-power applications.
Replacement Considerations
FCPF600N60Z: Through-hole TO-220-3 equivalent with identical electrical parameters. FCP600N60Z: Discontinued through-hole variant with similar specifications.
