FCD600N65S3R0

$2.06

Description：MOSFET N-CH 650V 6A DPAK
Series：SuperFET® III
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2fc55aa7067a Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 6A DPAK
Series：SuperFET® III
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

FCD600N65S3R0

Overview

The FCD600N65S3R0 is a single N-channel power MOSFET from the SUPERFET III family, utilizing charge balance technology for low on-resistance and gate charge. It features a 650V drain-source voltage rating with a typical RDS(on) of 493 mΩ at 10V VGS. The device supports a continuous drain current of 6A and has a typical gate charge (Qg) of 11 nC. It operates within a junction temperature range of -55°C to +150°C and is housed in a DPAK-3 (TO-252-3) surface-mount package.

Feature Summary

SUPERFET III architecture employs charge balance technology to minimize conduction loss and enhance switching performance.
Easy Drive series design facilitates EMI management and simplifies circuit implementation.
Capable of withstanding extreme dv/dt rates for robust operation in high-frequency applications.

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by ON Semiconductor. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component for designs requiring efficient high-voltage switching with minimal drive power. The low gate charge reduces driver complexity, while the super-junction structure offers improved efficiency compared to standard planar technologies in similar voltage classes.

Part Context

This part belongs to the SUPERFET III series, representing ON Semiconductor's high-voltage super-junction MOSFET family. The series integrates advanced charge balance technology to deliver superior performance metrics relative to previous generations, targeting modern high-density power conversion needs.

Replacement Considerations

Direct substitutes include other SUPERFET III devices with comparable voltage and resistance ratings, such as the FCP600N65S3R0 or FCPF600N65S3R0L-F154, provided pinout compatibility and thermal characteristics are verified against the original design constraints.