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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD7N60TF is an N-Channel SuperFET MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 7 A. The device exhibits a maximum on-resistance of 600 mΩ at a gate-source voltage of 10 V. Packaged in the TO-252AA (DPAK) format for through-hole mounting, it operates within a temperature range of -55°C to +150°C with a power dissipation rating of 83 W.
Feature Summary
- Integrates SuperFET technology to optimize switching performance and reduce conduction losses.
- Provides robust high-voltage capability suitable for demanding power conversion environments.
- Utilizes a single-channel enhancement mode configuration for straightforward driver integration.
Applications
- High-frequency power supply circuits
- Motor control systems
- Industrial inverter designs
Procurement Notes
Verify the specific suffix TF indicates the tape-and-reel packaging variant distinct from tube-packaged equivalents. Confirm the TO-252AA footprint compatibility with your PCB layout before finalizing orders. Ensure thermal management strategies align with the 83 W dissipation rating under actual operating conditions.
Selection Notes
Select this component when a 600 V rating and 7 A current capacity are required in a compact surface-mount package. Compare the 600 mΩ on-resistance against system efficiency targets. Consider the SuperFET architecture for improved switching characteristics compared to standard MOSFETs in similar voltage classes.
Part Context
This part belongs to the FCD7N60 series of N-Channel SuperFET MOSFETs from onsemi. It shares core electrical specifications with variants like the FCD7N60 but differs in packaging and handling format. The series is engineered for general-purpose high-voltage switching tasks requiring reliable performance.
Replacement Considerations
Direct substitutes include other 600 V, 7 A N-Channel MOSFETs in the DPAK package. Verify pinout compatibility and thermal resistance values when cross-referencing with competing brands or alternative onsemi models within the same voltage and current ratings.
