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Product Detailed Parameters
- Description：MOSFET N-CH 800V 6A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD850N80Z is an N-Channel SuperFET II MOSFET manufactured by onsemi. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 6 A. The device exhibits a maximum on-resistance of 850 mOhms at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 75 W. The component utilizes a DPAK-3 (TO-252-3) surface-mount package and has a typical gate charge of 22 nC.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Provides high-voltage capability suitable for robust power applications
- Features low on-resistance to minimize conduction losses
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) topologies
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before integration. Confirm that the DPAK-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 75 W power dissipation limit under actual operating conditions to maintain reliability.
Selection Notes
Select this component when an 800 V rating is required in a compact surface-mount form factor. Compare the 850 mOhm on-resistance against alternative packages like TO-220 for thermal handling needs. Evaluate the 6 A current rating against peak load demands to ensure adequate safety margins during transient events.
Part Context
This part belongs to the SuperFET II family from onsemi, designed for efficient power switching. It complements through-hole variants like the FCP850N80Z by offering a space-saving SMD solution. The series targets applications requiring high voltage isolation with reduced switching losses.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET II lineup. Verify that any substitute maintains the 800 V breakdown voltage and similar on-resistance characteristics.
