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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4.5A TO252
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD900N60Z is an N-channel SuperFET II MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and a typical on-resistance of 900 milliohms at 10V gate drive. The device utilizes through-hole packaging for thermal management and supports junction temperatures up to 150°C. Designed for high-voltage switching applications, it integrates body diode characteristics optimized for fast recovery performance.
Feature Summary
- SuperFET II technology integration for enhanced switching efficiency
- Zener-protected gate structure for robust operation
- Optimized body diode reverse recovery characteristics
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) topologies
Procurement Notes
Verify the specific datasheet revision and package marking details against official onsemi documentation before implementation. Confirm that the selected component variant matches the required thermal resistance specifications for the intended heat sink application. Ensure compliance with current RoHS directives as stated in the manufacturer's material declaration.
Selection Notes
Select this component when designing circuits requiring reliable high-voltage switching with moderate current capabilities. Evaluate the thermal dissipation requirements based on the specified power loss parameters under expected operating conditions. Consider the gate charge characteristics for driver compatibility in high-speed switching environments.
Part Context
This part belongs to the SuperFET II family from onsemi, which combines advanced trench MOSFET technology with integrated gate protection. The series targets applications demanding improved reliability and reduced switching losses compared to standard planar devices. It represents a mature solution for cost-sensitive power electronics designs.
