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Product Detailed Parameters
- Description：MOSFET N-CH 600V 9A DPAK
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：92.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD9N60NTM is a single N-channel enhancement mode MOSFET from onsemi's SupreMOS series, manufactured using silicon technology. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 9 A. The device exhibits a maximum on-resistance of 330 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 17.8 nC, a threshold voltage of 5 V, and a power dissipation rating of 92.6 W. It operates within a temperature range of -55 °C to +150 °C junction temperature and utilizes a DPAK-3 (TO-252-3) surface-mount package.
Feature Summary
- Integrated body diode with specified avalanche energy capability for robust switching performance
- SupreMOS technology optimized for low on-resistance and efficient thermal management
- Enhancement mode operation with standard gate voltage thresholds for easy driver compatibility
Applications
- High-voltage DC-DC converter circuits
- Motor control applications requiring single-channel switching
- General-purpose power switching in industrial equipment
Procurement Notes
Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm RoHS compliance status via official documentation prior to integration. Check for end-of-life notices as availability may be restricted. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to prevent package damage during soldering processes.
Selection Notes
Select this component when a 600 V rated N-channel MOSFET with moderate current handling is required in a compact surface-mount form factor. Compare on-resistance and gate charge values against alternative packages like TO-220 if higher thermal dissipation is needed. Verify that the 9 A continuous current rating meets the specific load requirements of the target application under expected operating temperatures.
Part Context
This part belongs to onsemi's SupreMOS family, which focuses on high-performance silicon MOSFETs for power conversion. The FCD9N60NTM specifically targets applications needing reliable switching in a DPAK package. It complements other variants in the series that offer different current ratings or package styles to suit diverse design constraints.
Replacement Considerations
Direct substitutes include FCP9N60N and FCPF9N60NTYDTU, which share similar electrical specifications but differ in package type and mounting style. Verify pinout compatibility and thermal resistance differences before swapping components in existing designs.
