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Product Detailed Parameters
- Description：MOSFET N-CH 650V 75A TO247
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs：222 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：7160 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The onsemi FCH023N65S3L4 is an N-channel enhancement-mode MOSFET from the SUPERFET III series, utilizing charge balance technology for high-voltage performance. It features a 650V drain-source voltage rating and a maximum continuous drain current of 75A. The device offers a low on-resistance of 23mΩ and a typical gate charge of 222nC at specified conditions. Housed in a TO-247 package with four pins for through-hole mounting, it supports a power dissipation of 595W and operates within a temperature range of -55°C to 150°C.
Feature Summary
- SUPERFET III architecture using charge balance technology for optimized switching and conduction losses
- High dv/dt capability to minimize electromagnetic interference (EMI) issues
- 100% avalanche tested for enhanced reliability under harsh operating conditions
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible Power Supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix L4 against official datasheets to confirm pinout configuration and packaging details. Ensure compatibility with thermal management requirements given the 595W dissipation rating. Confirm RoHS compliance status directly with manufacturer documentation prior to integration into final assemblies.
Selection Notes
Select this component for designs requiring robust high-voltage handling with efficient switching characteristics. The low gate charge facilitates easier driver design while maintaining high efficiency. Evaluate thermal resistance parameters to ensure adequate heat sinking for sustained operation at rated currents.
Part Context
This part belongs to the SUPERFET III family, representing onsemi's advanced superjunction MOSFET technology. These devices are engineered to provide superior performance compared to traditional planar technologies, offering lower figure-of-merit values for improved system efficiency in power electronics applications.
Replacement Considerations
Consult official substitution guides for verified equivalents. Cross-reference electrical parameters such as Rds(on), Qg, and Vdss when evaluating alternative components to ensure functional parity.
