ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 77A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：380 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13700 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：592W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Download product information
Overview
The onsemi FCH041N60E is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a 600V drain-source voltage rating and a continuous drain current of 76A at case temperature. The device utilizes superjunction technology to achieve a low maximum on-resistance of 41mΩ at Vgs=10V. Key electrical characteristics include a typical gate charge of 277nC, a threshold voltage of 3V, and a power dissipation capacity of 595W in a TO-247-4 package.
Feature Summary
- SuperFET II superjunction technology for optimized performance
- Low on-resistance reducing conduction losses
- Enhanced avalanche ruggedness with 100% testing
- Flange mount design for efficient thermal management
Applications
- High-frequency switching power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) circuits
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout compatibility and exact electrical tolerances. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the procurement channel provides traceability documentation required for industrial or automotive-grade applications.
Selection Notes
Select this component when high efficiency and robust thermal handling are required in medium-to-high power designs. The low gate charge facilitates easier driver integration compared to standard MOSFETs. Evaluate the thermal resistance requirements of the application to ensure the TO-247-4 package meets the heat dissipation needs under continuous load conditions.
Part Context
This part belongs to onsemi's SuperFET II family, which employs charge balance technology to minimize both on-resistance and gate charge. This architecture allows for higher switching frequencies and improved overall system efficiency compared to conventional planar MOSFET technologies in similar voltage classes.
Replacement Considerations
Direct replacements within the same series include FCH041N60F. Verify that substitute parts maintain identical pin configurations and thermal characteristics to ensure seamless integration without circuit redesign.
