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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs：298 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH041N65EF-F155 is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It utilizes charge balance technology to achieve low on-resistance and gate charge, reducing conduction and switching losses. Key electrical parameters include a drain-source voltage of 650 V, a maximum continuous drain current of 76 A at 25°C, and a typical on-resistance of 34 mΩ at VGS=10V. The device features a TO-247 package with a maximum power dissipation of 595 W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II architecture using charge balance technology for optimized performance
- Low on-resistance and gate charge to minimize conduction and switching losses
- High avalanche energy capability for improved system reliability
- Optimized body diode reverse recovery characteristics
Applications
- Hard and soft-switching DC-DC converters
- Interleaved boost Power Factor Correction (PFC)
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC systems
Procurement Notes
Verify the specific suffix against official documentation, as variations may indicate different packaging or testing criteria. Confirm RoHS compliance and automotive qualification status through the manufacturer's datasheet. Ensure the ordering part number matches the required package type and thermal specifications for your design.
Selection Notes
Select this component for high-voltage applications requiring efficient power conversion. The low RDS(on) supports high-current designs, while the robust avalanche rating provides protection against inductive load transients. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance for your enclosure design.
Part Context
This device is part of onsemi's SuperFET II family of high-voltage superjunction MOSFETs. These components are engineered to deliver superior efficiency compared to traditional planar technologies by balancing charge distribution within the silicon structure.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify that any replacement maintains equivalent voltage ratings, current handling capabilities, and package dimensions.
