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Product Detailed Parameters
- Description：N-CHANNEL, MOSFET
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The FCH041N65EF is an N-channel Power MOSFET from onsemi's SUPERFET II family, utilizing super-junction charge balance technology. It features a 650V drain-source voltage rating and a typical on-resistance of 44mΩ in a TO-247L package. Designed for high-efficiency switching applications, it offers low gate charge and optimized thermal performance.
Feature Summary
- Super-junction charge balance technology for superior efficiency
- Low on-resistance and fast switching characteristics
- Robust avalanche energy capability
Applications
- High-frequency power supplies
- Uninterruptible power systems (UPS)
- Industrial motor drives
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor operations are now part of onsemi. Confirm the specific suffix (e.g., -F155) matches your packaging requirements. Check datasheet revisions to ensure compatibility with current design specifications and compliance standards.
Selection Notes
Select this component for applications requiring high voltage blocking with minimal conduction losses. The TO-247L package provides reliable through-hole mounting for industrial environments. Ensure thermal management strategies align with the device's power dissipation limits under expected operating conditions.
Part Context
This device belongs to the SUPERFET II FRFET family, representing an evolution in silicon carbide or advanced silicon MOSFET technologies. It replaces older generations by offering improved figure-of-merit metrics, balancing voltage handling with reduced switching losses for modern power electronics.
Replacement Considerations
Direct substitutes include FCH041N65F. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with other SuperFET II variants if different packaging or slight parameter variations are acceptable.
