ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：FRFET®, SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs：298 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Download product information
Overview
The FCH041N65EFL4 is an N-channel MOSFET from onsemi's SuperFET II series, utilizing charge-balanced superjunction technology. It features a 650V drain-source voltage rating and a maximum on-resistance of 41mΩ at VGS=10V. The device supports a continuous drain current of 76A in a TO-247-4 package. Key electrical parameters include a gate charge of 229nC, threshold voltage of 3V, and power dissipation of 595W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- SuperFET II superjunction architecture for low conduction and switching losses
- Optimized body diode reverse recovery characteristics
- High avalanche energy capability with single pulse ratings
- Enhanced dv/dt immunity and reliability
Applications
- Soft-switching and hard-switching DC-DC converters
- Interleaved boost Power Factor Correction (PFC)
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) systems
Procurement Notes
Verify the manufacturer designation carefully, as the part number is currently assigned to onsemi following corporate restructuring. Confirm that the specific suffix EFL4 corresponds to the required TO-247-4 packaging and lead frame configuration. Ensure compliance with RoHS standards and check for any relevant automotive certifications if the application requires AEC-Q101 qualification.
Selection Notes
Select this component for high-efficiency power conversion designs requiring low thermal resistance and robust switching performance. The low RDS(on) minimizes conduction losses, while optimized gate charge reduces switching energy. Consider the TO-247-4 package for effective heat dissipation in high-power applications such as industrial motor drives or renewable energy inverters.
Part Context
This device belongs to the SuperFET II family, representing an evolution in planar stripe DMOS technology. It integrates charge balance techniques to achieve superior performance compared to traditional MOSFETs. The product line targets demanding applications where efficiency, size, and reliability are critical, offering improved system-level performance through reduced component count and enhanced thermal management.
Replacement Considerations
Direct replacements must match the 650V rating, 41mΩ max RDS(on), and TO-247-4 footprint. Verify equivalent gate charge and avalanche energy specifications to ensure circuit compatibility.
