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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247-3
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：304 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13566 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The FCH041N65F-F085 is an N-channel SuperFET II high-voltage superjunction MOSFET manufactured by onsemi. It features a TO-247-3 package with a drain voltage of 650 V and a continuous drain current of 76 A at 25°C. The device exhibits a maximum on-resistance of 41 mΩ at VGS = 10 V and ID = 38 A, with a typical total gate charge of 234 nC. It supports single-pulse avalanche energy up to 2025 mJ and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes charge balance technology for low conduction and switching losses
- Optimized body diode reverse recovery performance reduces system component count
- Capable of handling high dv/dt rates and significant avalanche energy
- Qualified for automotive applications under AEC-Q101 standards
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Boost PFC systems in hybrid electric and electric vehicles
Procurement Notes
Verify the manufacturer designation carefully, as the part number prefix 'FCH' corresponds to onsemi products rather than Fairchild Semiconductor. Confirm the specific suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices affecting electrical characteristics or packaging.
Selection Notes
Select this component for designs requiring high efficiency in hard and soft-switching topologies. The low gate charge and optimized reverse recovery characteristics make it suitable for high-frequency operation. Consider thermal management requirements given the power dissipation capabilities and ensure the driving circuit can handle the specified gate threshold and charge levels.
Part Context
This device belongs to the SuperFET II family of high-voltage superjunction MOSFETs. These components are engineered to provide superior performance compared to traditional planar MOSFETs by balancing charge distribution. This architecture allows for reduced on-resistance without compromising breakdown voltage, enhancing overall system efficiency in power conversion applications.
Replacement Considerations
- FCH041N65EFL4
FAQ
What is the maximum single-pulse avalanche energy rating?
The device has a single-pulse avalanche energy rating of 2025 mJ.
Does this MOSFET support repetitive avalanche operation?
Yes, the datasheet indicates the device possesses Unclamped Inductive Switching (UIS) capability, supporting both single and repetitive pulse avalanche conditions.
