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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：304 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13566 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH041N65F-F085 is an N-channel SuperFET II MOSFET from onsemi, utilizing charge balance technology for low conduction and switching losses. It features a 650V drain-source voltage rating and a maximum continuous drain current of 76A at 25°C. The device offers a typical RDS(on) of 34mΩ and a total gate charge of 234nC. Packaged in TO-247-3, it supports junction temperatures up to 150°C and includes AEC-Q101 automotive qualification.
Feature Summary
- SuperFET II architecture with charge balance technology for optimized performance
- High avalanche energy capability (EAS 2025 mJ) for robust operation
- Optimized body diode reverse recovery characteristics
- Automotive grade certification via AEC-Q101 standard
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC)
- HEV-EV automotive boost PFC circuits
Procurement Notes
Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Confirm current availability status as distribution channels may list obsolete or end-of-life inventory. Ensure thermal management design accounts for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component for high-efficiency applications requiring low switching losses and high reliability. The integrated body diode reduces external component count. Verify that the system's thermal environment allows for the rated power dissipation within the TO-247-3 package constraints.
Part Context
This part belongs to the SuperFET II family, representing onsemi's advanced superjunction MOSFET technology. It is designed to replace older discrete solutions by integrating optimized gate drive requirements with high voltage blocking capabilities in a single silicon structure.
Replacement Considerations
Check for direct pin-compatible alternatives within the SuperFET II series. Verify that substitute parts meet the same AEC-Q101 automotive qualification standards if used in vehicle electronics.
