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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs：294 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13020 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH041N65F-F155 is a SuperFET II N-channel enhancement mode MOSFET utilizing charge balance technology. It features a 650 V drain-source voltage and a maximum on-resistance of 41 mΩ at VGS=10 V. The device supports a continuous drain current of 76 A at 25°C case temperature, with a typical total gate charge of 234 nC. Packaged in TO-247 for through-hole mounting, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II architecture with charge balance technology for low conduction and switching losses
- High avalanche energy capability (EAS) for robust operation under transient conditions
- Optimized body diode reverse recovery characteristics to reduce system component count
- AEC-Q101 qualified for automotive electronics applications
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- HEV-EV automotive boost PFC systems
Procurement Notes
Verify the specific suffix F155 against the official datasheet to confirm package and marking details. Ensure compliance with RoHS standards and lead-free requirements. Confirm AEC-Q101 qualification status if deploying in automotive contexts. Validate thermal management designs against the specified RthJC and power dissipation limits.
Selection Notes
Select this component for high-efficiency power conversion requiring low RDS(on) and fast switching speeds. The SuperFET II technology minimizes EMI issues compared to standard superjunction devices. Consider the TO-247 package for effective heat dissipation in high-current industrial or automotive environments.
Part Context
This part belongs to the SuperFET II family from onsemi, designed for high-voltage applications. It integrates advanced superjunction MOSFET technology to deliver superior performance over traditional silicon devices. The series targets demanding power supply topologies where efficiency and reliability are critical.
Replacement Considerations
Consult official substitution guides for compatible SuperFET II variants. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.
