ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL, MOSFET
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The FCH041N65F is a SuperFET II series N-channel MOSFET manufactured by Fairchild Semiconductor, utilizing charge balance technology for optimized performance. It features a 650V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device supports a continuous drain current of 76A at 25°C case temperature and handles up to 595W power dissipation. Key electrical characteristics include a maximum on-resistance of 41mΩ at Vgs=10V and Id=38A, with a typical gate charge of 234nC. It offers robust avalanche energy capability and meets AEC-Q101 automotive standards.
Feature Summary
- SuperFET II architecture employing charge balance technology for low conduction and switching losses
- Optimized body diode reverse recovery characteristics to enhance system reliability
- High single-pulse avalanche energy rating for improved ruggedness
- Automotive grade qualification compliant with AEC-Q101 standards
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Boost PFC applications in Hybrid Electric Vehicles (HEV) and Electric Vehicles (EV)
Procurement Notes
Verify the specific suffix against the official datasheet to confirm exact package type and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability documentation for automotive-grade parts. Cross-reference the manufacturer part number with the latest revision history to avoid obsolete stock.
Selection Notes
Select this component for high-efficiency hard-switching and soft-switching topologies requiring low thermal resistance. The SuperFET II technology reduces gate charge compared to standard planar MOSFETs, improving switching speed. Evaluate the thermal management design based on the specified junction-to-case thermal resistance. Consider the avalanche energy rating when designing for inductive load protection.
Part Context
This part belongs to the SuperFET II family from Fairchild Semiconductor, now part of onsemi. The series integrates advanced trench gate and field plate technologies to minimize Rds(on) while maintaining low gate charge. It represents an evolution in high-voltage silicon MOSFET design, targeting efficiency improvements in power conversion systems.
Replacement Considerations
Direct replacements must match the 650V rating, TO-247 package, and SuperFET II topology. Verify equivalent Rds(on) and Qg values to maintain circuit efficiency. Check for identical AEC-Q101 certification if used in automotive applications.
