FCH070N60E

Overview

The FCH070N60E is an N-channel enhancement-mode MOSFET from onsemi's SuperFET II series, utilizing high-voltage super-junction technology. It features a drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 20.6 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 190 mΩ at Vgs = 10 V. Key electrical parameters include a typical gate charge (Qg) of 82 nC, a threshold voltage (Vgs(th)) of 3.5 V, and a power dissipation (Pd) of 39 W. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 through-hole package.

Feature Summary

• Employs SuperFET II super-junction technology with charge balance for low conduction losses
• Optimized for easy-drive applications with reduced gate charge requirements
• Provides robust performance in high-voltage switching environments

Applications

• High-efficiency power supply designs
• Industrial motor control systems
• General-purpose high-voltage switching circuits

Procurement Notes

Verify the specific datasheet revision and parameter tolerances against the manufacturer's official documentation before integration. Confirm that the TO-220-3 package thermal characteristics align with the target application's heat dissipation requirements. Ensure compatibility with the intended gate drive voltage levels, specifically noting the 10 V test condition for Rds(on). Cross-reference part markings to confirm authenticity and traceability.

Selection Notes

Select this component when a balance of low on-resistance and manageable gate drive complexity is required for 600 V class applications. The SuperFET II architecture offers advantages in switching efficiency compared to traditional planar technologies. Consider the thermal resistance of the TO-220-3 package for system-level thermal management planning. Evaluate the 82 nC gate charge against the driving capability of the selected controller IC.

Part Context

This device belongs to onsemi's SuperFET II family, which represents a shift towards super-junction MOSFETs for medium-to-high voltage applications. The series focuses on reducing figure-of-merit metrics by lowering both Rds(on) and Qg simultaneously. This specific model targets cost-sensitive yet performance-driven markets where efficient power conversion is critical.

Replacement Considerations

Direct replacements must match the 650 V rating, N-channel configuration, and TO-220-3 footprint. Verify that alternative parts offer comparable or superior Rds(on) and Qg values to maintain system efficiency. Check for pinout compatibility and ensure thermal performance specifications meet or exceed the original design constraints.