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Product Detailed Parameters
- Description：MOSFET N-CH 600V 52A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：72mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5890 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：481W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH072N60F is a single N-channel power MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 52A at case temperature. The device exhibits a maximum on-resistance of 72mΩ when driven at 10V with a drain current of 36A. It utilizes the SupreMOS™ technology platform and is housed in a TO-247 package.
Feature Summary
- Utilizes SupreMOS™ technology for optimized performance
- Features an integrated body diode
- Designed for high-voltage switching applications
Applications
- High-frequency power supplies
- Motor control systems
- Industrial inverters
Procurement Notes
Verify the exact suffix against official documentation, as variations may exist. Confirm RoHS compliance status and specific thermal characteristics directly from the manufacturer datasheet before integration into designs to ensure operational reliability under intended load conditions.
Selection Notes
Select this component based on its 600V breakdown capability and low on-resistance profile suitable for efficient power conversion. Evaluate thermal management requirements relative to the specified continuous current rating and package constraints to maintain safe operating temperatures during operation.
Part Context
This part belongs to the SupreMOS™ family of power MOSFETs from onsemi. These devices are engineered to provide superior switching performance and robust avalanche energy handling capabilities compared to standard trench technologies, making them suitable for demanding industrial environments.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and pinout configurations to guarantee functional compatibility within existing circuit architectures.
