FCH072N60F-F085

Overview

The FCH072N60F-F085 is an N-channel power MOSFET manufactured by onsemi, designed for high-voltage applications. It features a drain-source voltage rating of 600 V and a continuous drain current capability of 52 A. The device exhibits a maximum on-resistance of 72 mΩ. Key electrical parameters include an input bias capacitance of 10.9 nF and a total gate charge of 347 nC. These specifications define its performance envelope in switching and conduction operations.

Feature Summary

• N-channel enhancement mode transistor architecture
• Optimized for high-voltage operation up to 600 V
• Capable of handling significant continuous current loads

Applications

• High-voltage power conversion systems
• Industrial motor control circuits
• General-purpose switching applications

Procurement Notes

Verify the specific suffix F085 against official datasheets to confirm package and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure the ordering part number matches the exact electrical ratings required for the target design to avoid substitution errors.

Selection Notes

Select this component when a 600 V rating and approximately 72 mΩ on-resistance are required. Evaluate thermal management requirements based on the 52 A current rating. Compare gate charge values against driver capabilities to ensure efficient switching performance within the intended circuit topology.

Part Context

This part belongs to the FCH series of N-channel MOSFETs from onsemi. The series targets high-efficiency power switching solutions. The TO-247 package variant provides robust mechanical mounting and thermal dissipation characteristics suitable for industrial environments.