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Product Detailed Parameters
- Description：MOSFET N-CH 650V 54A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7162 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：481W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH077N65F-F085 is an N-Channel SuperFET II FRFET MOSFET manufactured by onsemi. It features a 650 V drain-source voltage rating and utilizes charge balance technology to achieve low conduction and switching losses. The device supports high-voltage full-bridge and half-bridge DC-DC topologies, interleaved boost PFC circuits, and HEV-EV automotive boost PFC applications. It offers optimized body diode reverse recovery performance to enhance system reliability.
Feature Summary
- SuperFET II architecture with charge balance technology for reduced power loss
- Optimized body diode reverse recovery characteristics
- High dv/dt rate capability
- AEC-Q101 qualified for automotive environments
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC)
- HEV-EV automotive boost PFC systems
Procurement Notes
Verify the specific datasheet revision and package marking code upon receipt. Confirm AEC-Q101 qualification status if required for automotive integration. Check for any recent Product Change Notices (PCN) regarding manufacturing site or material composition changes before finalizing design-in.
Selection Notes
Select this component for high-efficiency hard-switching and soft-switching topologies requiring robust avalanche energy handling. Ensure thermal management aligns with the specified junction-to-case thermal resistance. Validate gate drive requirements against the input capacitance and total gate charge specifications for optimal switching speed.
Part Context
This part belongs to the SuperFET II family from onsemi, which integrates advanced trench MOSFET technology with a fast-recovery body diode. The series is designed to replace traditional discrete solutions in high-voltage power supplies, offering superior performance in terms of efficiency and size reduction compared to standard planar MOSFETs.
Replacement Considerations
Direct substitutes include other SuperFET II devices within the same voltage class, such as the FCH041N65F-F085 or FCH190N65F-F085, provided current ratings and pinout compatibility are verified. Cross-reference with Fairchild Semiconductor legacy documentation for historical equivalence.
