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Product Detailed Parameters
- Description：MOSFET N-CH 650V 54A TO247
- Series：FRFET®, SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：5V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7109 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：481W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH077N65F-F155 is an N-channel Power MOSFET from the SuperFET II series, manufactured by onsemi (formerly Fairchild Semiconductor). It features a 650V drain-source voltage rating and a continuous drain current of 54A at case temperature. The device offers a maximum on-resistance of 77mΩ at 10V gate drive. Key electrical parameters include a maximum gate charge of 145nC and an input capacitance of 4895pF. It is housed in a TO-247-3 through-hole package with a maximum power dissipation of 481W.
Feature Summary
- SuperFET II technology integrates body diode for improved switching performance
- Low on-resistance reduces conduction losses
- Fast body diode recovery characteristics
Applications
- High-frequency power supplies
- Motor control applications
- Industrial inverters
Procurement Notes
Verify the manufacturer designation as onsemi due to corporate acquisition history. Confirm the specific suffix -F155 corresponds to the required tube packaging format. Cross-reference datasheet revisions to ensure compatibility with current design specifications. Validate component authenticity through authorized distribution channels.
Selection Notes
Select this component for designs requiring high voltage blocking capability with low conduction losses. The TO-247-3 package facilitates efficient thermal management for high-power applications. Ensure gate drive voltage supports the 10V threshold for optimal Rds(on) performance. Consider thermal resistance limits when determining heat sink requirements.
Part Context
This part belongs to the SuperFET II family, which combines trench gate and field plate technologies. The series is designed for high-efficiency power conversion. The FCH prefix indicates the Fairchild heritage within the onsemi portfolio. This specific model targets general-purpose high-voltage switching applications.
Replacement Considerations
Direct substitutes may include other 650V N-channel MOSFETs in TO-247 packages with comparable Rds(on) and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Check for equivalent switching speed and body diode performance metrics.
