ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 54A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：5V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7109 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：481W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Download product information
Overview
The FCH077N65F-F155 is a single N-channel enhancement mode MOSFET from onsemi's SuperFET II series, utilizing charge balance technology for low conduction and switching losses. It features a 650 V drain-source voltage rating and a TO-247-3 through-hole package. Key electrical parameters include a maximum continuous drain current of 76 A at 25°C case temperature, a typical on-resistance of 77 mΩ at VGS=10V, and a maximum gate-source voltage of ±30 V. The device supports a junction temperature up to +150°C and includes an integrated body diode.
Feature Summary
- SuperFET II architecture with charge balance technology for optimized performance
- Low on-resistance and gate charge characteristics for efficiency
- High avalanche energy capability for robust operation
- Integrated fast-recovery body diode
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC applications
Procurement Notes
Verify the specific suffix F155 against the official datasheet to confirm packaging details and compliance status. Confirm RoHS compliance and lead times directly with authorized distributors or onsemi, as availability may vary by region. Ensure thermal management design accounts for the specified power dissipation limits in the target application environment.
Selection Notes
Select this component for high-efficiency hard-switching and soft-switching topologies requiring high voltage blocking capabilities. The SuperFET II technology offers improved dv/dt rates and reduced EMI compared to standard designs. Evaluate thermal resistance values to ensure adequate heat sinking for the intended current loads and ambient temperatures.
Part Context
This part belongs to the SuperFET II family of high-voltage superjunction MOSFETs from onsemi. These devices are engineered to minimize both conduction and switching losses simultaneously. The FCH077N65F variant specifically targets applications demanding high reliability and efficiency in power conversion systems operating at 650 V levels.
Replacement Considerations
Direct substitutes within the same SuperFET II series with similar Rds(on) and voltage ratings should be consulted. Verify pinout compatibility and thermal characteristics before swapping. Cross-reference with other manufacturers' 650 V N-channel MOSFETs only if electrical parameters and package dimensions match exactly.
