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Product Detailed Parameters
- Description：MOSFET N-CH 650V 30A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2480 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH099N65S3-F155 is a high-voltage N-channel SuperFET III MOSFET utilizing charge balance technology for low conduction and switching losses. It features a 650V drain-source voltage rating with a maximum RDS(on) of 99mΩ at VGS=10V. The device supports a continuous drain current of 30A at TC=25°C, reducing to 19A at TC=100°C, with a pulse current capability of 75A. Key electrical parameters include a typical gate charge (Qg) of 57nC and an effective output capacitance (Coss(eff.)) of 517pF. Designed for robust performance, it withstands high dv/dt rates and undergoes 100% avalanche testing.
Feature Summary
- SuperFET III architecture employs charge balance technology to minimize conduction and switching losses while supporting high dv/dt operation.
- Optimized gate charge and output capacitance characteristics facilitate rapid switching speeds and reduced electromagnetic interference (EMI).
- Validated reliability through comprehensive 100% avalanche testing ensures durability under extreme operational stress conditions.
Applications
- Telecommunications and server power supply systems requiring high efficiency and stability.
- Industrial power supplies demanding robust voltage handling and anti-interference capabilities.
- Uninterruptible Power Supply (UPS) and solar energy conversion systems needing reliable power management.
Procurement Notes
Verify the specific suffix -F155 against official datasheets to confirm package type and reel specifications. Ensure compatibility with RoHS standards and lead-free requirements. Cross-reference absolute maximum ratings with your circuit design limits to prevent device failure during procurement validation.
Selection Notes
Select this component for designs prioritizing low thermal dissipation and high switching frequency. Evaluate the trade-off between the 99mΩ maximum resistance and the 57nC gate charge against your driver capabilities. Confirm that the TO-247 package fits your thermal management strategy and PCB layout constraints effectively.
Part Context
This part belongs to the SuperFET III family from onsemi, representing advanced superjunction MOSFET technology. It succeeds earlier generations by offering improved charge balance and lower parasitic capacitances. The series targets modern power conversion applications where size reduction and efficiency are critical design drivers.
Replacement Considerations
Direct substitutes within the same series include FCPF099N65S3 and FCH029N65S3, though their current ratings differ. Verify pinout compatibility and thermal resistance values before swapping. Ensure any replacement maintains the required 650V blocking voltage and switching speed characteristics.
