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Product Detailed Parameters
- Description：MOSFET N-CH 650V 30A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2480 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH099N65S3_F155 is an N-channel SuperFET III power MOSFET from onsemi, utilizing charge balance technology for low conduction and switching losses. It features a 650V drain-source voltage rating and a maximum RDS(on) of 99mΩ at VGS=10V. The device supports a continuous drain current of 30A at TC=25°C and handles a pulse current of 75A. Key electrical characteristics include a typical gate charge of 57nC and effective output capacitance of 517pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247 package.
Feature Summary
- SuperFET III architecture with charge balance technology for optimized performance
- High dv/dt capability to support fast switching applications
- Low gate charge and output capacitance for reduced switching losses
- 100% avalanche tested for enhanced reliability under stress
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible Power Supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix _F155 against the official datasheet to confirm tape-and-reel packaging requirements. Ensure the component meets RoHS standards and lead-free specifications as documented by onsemi. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and supply chain integrity before procurement.
Selection Notes
Select this component for designs requiring high efficiency and robust performance in hard-switching environments. The low RDS(on) minimizes conduction losses, while the SuperFET III structure aids in EMI reduction. Consider the thermal management capabilities provided by the TO-247 package for heat dissipation in high-power density applications.
Part Context
This device belongs to the SuperFET III family, representing onsemi's advanced superjunction MOSFET technology. The series is engineered to deliver superior trade-offs between conduction and switching losses compared to traditional planar technologies. It targets high-voltage applications where system size and efficiency are critical design constraints.
Replacement Considerations
Consult the official onsemi replacement guide for verified cross-reference part numbers. Do not assume functional compatibility with other 650V MOSFETs without verifying pinout, thermal resistance, and electrical parameter alignment.
