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Product Detailed Parameters
- Description：MOSFET N-CH 600V 37A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：139 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4302 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH104N60F-F085 is a single N-channel SuperFET II MOSFET manufactured by onsemi. It features a 600V drain-source voltage and a continuous drain current of 37A at case temperature. The device exhibits a maximum on-resistance of 104mΩ at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 357W. The component utilizes a TO-247-3 through-hole package.
Feature Summary
- SuperFET II technology integrates charge balancing for low conduction and switching losses.
- Optimized body diode reverse recovery characteristics reduce system complexity.
- High avalanche energy capability enhances reliability under stress conditions.
Applications
- Hard and soft-switching DC-DC converter topologies
- Interleaved boost Power Factor Correction circuits
- Hybrid Electric Vehicle and Electric Vehicle boost applications
Procurement Notes
Verify the specific suffix F085 against official datasheets to confirm automotive qualification status, as standard FCH104N60F listings may lack AEC-Q101 certification. Confirm RoHS compliance and lead time requirements with authorized distributors prior to ordering.
Selection Notes
Select this component for high-voltage applications requiring efficient thermal management in through-hole designs. The 600V rating suits industrial power supplies. Ensure gate drive voltage supports the 10V Rds(on) specification for optimal efficiency.
Part Context
This part belongs to the SuperFET II family, utilizing silicon superjunction technology. It replaces older discrete MOSFET solutions by combining optimized cell density with integrated fast recovery body diodes for improved performance in high-frequency switching environments.
Replacement Considerations
Direct substitutes include FCH104N60F and FCP104N60F. Verify pinout compatibility and thermal resistance differences when swapping between TO-247-3 and TO-220-3 packages.
