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The FCH104N60F is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series, housed in a TO-247-3 through-hole package. It features a 600V drain-source voltage rating and supports a continuous drain current of 37A at case temperature. The device exhibits a maximum on-resistance of 104 milliohms at 10V gate drive. Key electrical characteristics include a gate charge of 139nC and an input capacitance of 5950pF. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 357W.
Verify the specific suffix 'F' corresponds to the tube packaging configuration required for your assembly process. Confirm RoHS compliance status and REACH declarations against the latest manufacturer documentation before integration. Ensure the ordering information matches the exact part number to avoid discrepancies in electrical parameters or physical dimensions during procurement.
Select this component when high voltage isolation and efficient thermal handling are critical. The TO-247-3 package facilitates direct mounting to heatsinks for superior heat dissipation compared to surface-mount alternatives. Evaluate the 104mΩ on-resistance against system conduction loss requirements to ensure optimal efficiency under load conditions.
This device belongs to the SuperFET II family, which integrates advanced trench gate technology with optimized body diode characteristics. The FCH104N60F represents a high-performance solution designed for demanding power electronics applications requiring reliable operation under high voltage stress and significant current loads.
The FCP104N60F offers identical electrical specifications but utilizes a TO-220-3 package. Verify mechanical fitment and thermal interface requirements when substituting between these form factors.
The absolute maximum gate-source voltage is rated at ±20V.
Yes, the FCH104N60F includes a built-in body diode configured for single-channel operation.