FCH125N60E

Description：MOSFET N-CH 600V 29A TO247-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:cbe9c0bc0391 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 29A TO247-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2990 pF @ 380 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCH125N60E

Overview

The FCH125N60E is a single N-channel SuperFET II MOSFET manufactured by onsemi, utilizing silicon technology in a TO-220-3 through-hole package. It features a 600V drain-source breakdown voltage and a maximum continuous drain current of 23A at 25°C case temperature. The device exhibits a typical on-resistance of 132mΩ and a total gate charge of 57nC. Designed for high efficiency, it supports junction temperatures up to 150°C with a power dissipation rating of 227W.

Feature Summary

Integrates SuperFET II superjunction architecture for optimized low conduction and switching losses.
Features an 'E' designation indicating Easy Drive characteristics that manage electromagnetic interference through controlled switching speeds.
Includes built-in body diode with specified reverse recovery performance for synchronous rectification applications.

Applications

High-efficiency power supply designs
Industrial motor control systems
Synchronous rectification circuits

Procurement Notes

Verify the specific datasheet revision and ordering information directly from onsemi official channels or authorized distributors. Confirm that the component matches the required thermal and electrical specifications for your design before procurement.

Selection Notes

Select this component when designing for high-voltage applications requiring robust avalanche capability and manageable EMI. The Easy Drive variant is suitable where switching noise reduction is prioritized over maximum speed.

Part Context

This part belongs to the SuperFET II family, representing advanced superjunction MOSFET technology. It offers improved performance metrics compared to standard trench MOSFETs, specifically targeting high-frequency switching environments.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the SuperFET II series or equivalent high-voltage N-channel MOSFETs with matching pinouts and electrical ratings.

FAQ

What does the 'E' suffix indicate in the model number?

The 'E' suffix denotes the Easy Drive version, which has slightly slower rise and fall times to help manage electromagnetic interference (EMI) issues during operation.