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Product Detailed Parameters
- Description：MOSFET N-CH 600V 28A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3590 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：278W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH130N60 is a SuperFET II N-channel power MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and supports a continuous drain current of 28A at case temperature. The device exhibits a maximum on-resistance of 130 milliohms when driven at 10V with a drain current of 14A. Key electrical characteristics include a gate charge of 70nC, an input capacitance of 3590pF, and a threshold voltage of 3.5V. Designed for through-hole mounting in TO-247-3 packages, it offers a power dissipation capacity of 278W and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Features low on-resistance for efficient conduction
- Includes built-in body diode for inductive load handling
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package variations or tape-and-reel options. Confirm RoHS compliance status and environmental classifications prior to integration. Check for obsolescence notices as this component may be subject to lifecycle changes. Ensure thermal management designs align with the specified 278W dissipation limit under actual operating conditions.
Selection Notes
Select this component for applications requiring high-voltage blocking capability combined with moderate current handling. The TO-247-3 package facilitates effective heat sinking for high-power scenarios. Evaluate the 130mΩ on-resistance against system efficiency targets. Consider the 70nC gate charge for driver selection and switching speed requirements in hard-switching topologies.
Part Context
This part belongs to the SuperFET II family of N-channel MOSFETs from onsemi. These devices utilize advanced trench gate and field plate technologies to reduce on-resistance and improve switching characteristics. The series is designed for general-purpose power switching applications where reliability and thermal performance are critical.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the 600V rating, TO-247-3 footprint, and equivalent Rds(on) specifications.
