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Product Detailed Parameters
- Description：MOSFET N-CH 650V 24A TO247
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3737 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：298W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH150N65F-F155 is an N-channel enhancement mode power MOSFET from onsemi's SuperFET II series. It utilizes silicon technology and features a TO-247-3 through-hole package. Key electrical parameters include a drain-source voltage of 650 V, a continuous drain current of 35 A at case temperature, and a maximum on-resistance of 110 mΩ at 10 V gate drive. The device has a typical gate charge of 145 nC and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II architecture for optimized switching performance
- Low on-resistance for reduced conduction losses
- High avalanche energy capability
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-to-AC converters
Procurement Notes
Verify the specific suffix F155 against the manufacturer datasheet to confirm packaging details. Ensure the component matches the required thermal management specifications for the intended application. Confirm RoHS compliance status with the supplier prior to ordering.
Selection Notes
Select this component for high-voltage applications requiring robust switching characteristics. Compare the 110 mΩ on-resistance against circuit loss requirements. Verify that the TO-247-3 package fits the PCB layout constraints and heatsinking capabilities.
Part Context
This part belongs to onsemi's SuperFET II family, designed for general-purpose power switching. It replaces older discrete MOSFETs in designs seeking improved efficiency. The FCH prefix indicates Fairchild Semiconductor heritage, now integrated into onsemi.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET II series. Verify if lower on-resistance variants are available for higher efficiency needs.
