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Product Detailed Parameters
- Description：MOSFET N-CH 650V 20.6A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3225 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH190N65F-F155 is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series. It features a 650V drain-source voltage rating and utilizes superjunction technology for optimized performance. The device is housed in a TO-247-3 package designed for through-hole mounting. Key electrical characteristics include a maximum continuous drain current of 76A at case temperature, a typical on-resistance of 190 milliohms at 10V gate drive, and a gate charge of 226 nanocoulombs. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Superjunction technology provides low on-resistance and fast switching capabilities.
- Optimized body diode reverse recovery reduces system component requirements.
- High avalanche energy capability ensures robust operation under stress.
Applications
- Industrial motor drives
- Uninterruptible power supply systems
- High-frequency switch-mode power supplies
Procurement Notes
Verify the specific suffix F155 against the manufacturer datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as required by project standards. Ensure thermal management design accounts for the TO-247 package dissipation limits. Validate that the 650V rating meets the circuit's peak voltage requirements with adequate safety margin.
Selection Notes
Select this component when high efficiency and ruggedness are required in medium-to-high power applications. The low on-resistance minimizes conduction losses, while the fast switching reduces dynamic losses. Compare total gate charge against driver capabilities to ensure adequate switching speed. Consider the thermal resistance of the TO-247 package for heat sink sizing in dense assemblies.
Part Context
This part belongs to onsemi's SuperFET II family, which integrates superjunction MOSFETs with optimized body diodes. The series targets high-efficiency power conversion where reduced switching losses and improved reliability are critical. The FCH190N65F variant specifically balances low on-state resistance with high voltage blocking capability for demanding industrial environments.
Replacement Considerations
Direct replacements must match the 650V rating, TO-247-3 package, and similar Rds(on) and Qg values. Verify pinout compatibility before substitution. Check if alternative manufacturers offer equivalent superjunction devices with compatible thermal and electrical characteristics.
