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The FCH20N60 is a silicon N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 600 V and a continuous drain current rating of 20 A at 25°C case temperature. The device exhibits a typical on-resistance (RDS(on)) of 0.19 ohms. It is housed in a TO-247AD package, designed for high-power switching applications requiring robust performance and low conduction losses.
Verify the manufacturer marking against Fairchild Semiconductor or ON Semiconductor branding, as ownership transitions may affect labeling. Confirm the package type matches the required TO-247AD footprint. Ensure the part number suffix aligns with specific tape-and-reel or tube packaging requirements if applicable to your assembly process.
Select this component when designing circuits requiring 600 V blocking capability and moderate current handling up to 20 A. Consider the thermal resistance of the TO-247AD package for heat dissipation needs. Evaluate the RDS(on) value against efficiency targets for power loss calculations in switching applications.
Fairchild Semiconductor was acquired by ON Semiconductor. Consequently, the FCH20N60 may be distributed under the ON Semiconductor brand while retaining its original Fairchild specifications. This transition reflects industry consolidation in the power semiconductor sector, where legacy part numbers often continue production under new corporate identities.
Cross-reference with other 600 V, 20 A N-channel MOSFETs in TO-247 packages from manufacturers like Infineon or Vishay. Verify pinout compatibility and electrical parameter equivalence before substitution.