FCH22N60N

Description：MOSFET N-CH 600V 22A TO247-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube

SKU:39f591350ed4 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 22A TO247-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：205W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCH22N60N

Overview

The FCH22N60N is an obsolete N-Channel Power MOSFET from onsemi's SUPREMOS series, utilizing high-voltage super-junction technology with a deep trench filling process. It features a 600 V drain-source voltage rating and a continuous drain current of 22 A. The device exhibits a maximum on-resistance of 165 mΩ at 10 V gate drive. It is housed in a TO-247 package for through-hole mounting. Key electrical characteristics include a gate charge of 45 nC at 10 V, input capacitance of 1950 pF at 100 V, and a gate threshold voltage range up to 4 V at 250 µA. Maximum ratings include ±30 V gate-source voltage and operation up to +150 °C junction temperature.

Feature Summary

Employs next-generation super-junction technology with deep trench filling for optimized performance.
Provides low conduction losses through minimized on-resistance characteristics.
Designed for high-voltage switching applications requiring robust thermal management.

Applications

High-frequency power supplies
Motor control circuits
Industrial inverters

Procurement Notes

Verify component obsolescence status before integration into new designs. Confirm availability of authorized distributors for existing stock or seek qualified replacement parts. Ensure all technical specifications match the original design requirements when sourcing alternatives. Check for compliance with current environmental regulations such as REACH and SVHC standards.

Selection Notes

Select this component only if legacy compatibility is required due to its obsolete status. Evaluate thermal performance within the TO-247 package constraints. Compare gate charge and on-resistance against modern alternatives for efficiency improvements. Ensure driver capabilities support the specified gate threshold and charge requirements.

Part Context

This part belongs to onsemi's SUPREMOS family, which utilizes super-junction architecture for high-voltage applications. The TO-247 package provides mechanical stability and heat dissipation suitable for through-hole assembly. As an N-channel enhancement mode device, it operates with positive gate-source voltage to conduct current between drain and source terminals.

Replacement Considerations

The NTHL120N60S5Z is listed as a manufacturer-recommended substitute. Verify pinout compatibility and electrical parameter alignment before substitution.