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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 2
- Series：SupreMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：126mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3352 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：216W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The FCH25N60N is an N-channel enhancement mode MOSFET from the SupreMOS series, manufactured by onsemi. It features a maximum drain-source voltage of 600 V and a continuous drain current of 25 A. The device utilizes a TO-247 package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 126 mΩ, a minimum gate threshold voltage of 2 V, and a maximum power dissipation of 216 W. The typical gate charge is 57 nC at 10 V, with a maximum gate-source voltage range of -30 V to +30 V. Operating temperatures span from -55 °C to +150 °C.
Feature Summary
- SupreMOS technology designed for high-efficiency switching applications
- Enhanced avalanche ruggedness for robust performance in inductive loads
- Low thermal resistance structure optimized for heat dissipation
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converters
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete semiconductor business was acquired by onsemi. Ensure the part number matches the specific suffix requirements for the desired tape-and-reel or tube packaging configuration. Confirm RoHS compliance status against the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a 600 V rating and 25 A current capacity are required in a TO-247 package. Consider the 126 mΩ on-resistance for conduction loss calculations. Evaluate the thermal management requirements based on the 216 W power dissipation limit. Compare gate charge characteristics against driver capabilities to ensure adequate switching speed without excessive drive losses.
Part Context
This device belongs to the SupreMOS family, which integrates advanced trench gate technology with optimized body diode characteristics. The FCH25N60N represents a transition period where Fairchild branding may still appear on legacy documentation or inventory systems despite the corporate acquisition. It serves as a direct replacement for older 600 V, 25 A discrete MOSFETs in industrial and consumer power electronics designs.
Replacement Considerations
Check for equivalent parts within the onsemi portfolio such as the FCH25N60NF. Verify pinout compatibility and thermal pad configurations when substituting with other manufacturers' 600 V TO-247 MOSFETs.
