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The onsemi FCH25N60N is an N-channel enhancement mode MOSFET belonging to the SupreMOS series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 25 A. The device utilizes a TO-247 package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 126 mΩ, a gate threshold voltage minimum of 2 V, and a typical gate charge of 57 nC at 10 V. It supports a maximum power dissipation of 216 W, operates within a temperature range of -55 °C to +150 °C, and has a maximum gate-source voltage rating of ±30 V.
Verify the specific ordering suffix against the official datasheet to ensure correct pin configuration and thermal characteristics. Confirm that the component meets required environmental compliance standards for the target application. Cross-reference the manufacturer's latest documentation to validate any recent design changes or updates before finalizing procurement specifications.
Select this component based on its 600 V breakdown voltage and 25 A current handling capacity suitable for medium-power conversion tasks. Evaluate the 126 mΩ on-resistance against thermal management requirements to ensure efficient operation. Consider the TO-247 package dimensions for mechanical fit and heat sinking compatibility in the final assembly design.
This part belongs to the SupreMOS family from onsemi, designed for high-efficiency power switching. The series emphasizes low conduction losses and robust reliability in demanding environments. It serves as a discrete solution for replacing integrated modules in cost-sensitive designs requiring high voltage tolerance.
Consult the official cross-reference list for verified substitutes. Ensure replacement parts match the 600 V rating, TO-247 footprint, and electrical characteristics without altering circuit functionality.