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Product Detailed Parameters
- Description：MOSFET N-CH 600V 35A TO247-3
- Series：SuperMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：98mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：181 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6640 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：312.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The Fairchild Semiconductor FCH35N60 is an N-channel enhancement mode MOSFET belonging to the SupreMOS series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 35 A at case temperature. The device utilizes TO-247 packaging for through-hole installation. Key electrical parameters include a maximum on-resistance of 110 mΩ at 17.5 A and 10 V gate drive, with a typical gate charge of 145 nC at 10 V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High current capability suitable for power switching applications
- Low saturation voltage for reduced conduction losses
- Fast switching performance optimized for inverter circuits
Applications
- AC and DC motor controls
- General purpose inverters
- Robotics systems
- Servo controls
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the TO-247 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required for general-purpose inverter designs. Consider the trade-off between the 110 mΩ on-resistance and the 145 nC gate charge for switching frequency optimization. Verify compatibility with standard 10 V logic gate drivers for optimal performance.
Part Context
This part belongs to Fairchild's SupreMOS family, designed for efficient power conversion. It serves as a discrete semiconductor solution for medium-power applications requiring robust voltage blocking and reliable switching characteristics in industrial environments.
Replacement Considerations
Consult official substitution guides for equivalent parts within the same voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before replacing the original component in existing designs.
