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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO247-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：79mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：250 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60-F085 is an N-channel power MOSFET from the SuperFET family, manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 47A at case temperature. The device utilizes charge balance technology to achieve low conduction losses and optimized switching performance. Key electrical parameters include a maximum gate-source threshold voltage of 4V and a typical total gate charge of 151nC at 10V. It is housed in a TO-247-3 package with a flange mount configuration.
Feature Summary
- SuperFET technology integrates body diode and MOSFET for reduced reverse recovery charge
- Optimized for high-frequency switching applications with low gate charge
- Enhanced avalanche ruggedness for improved system reliability
Applications
- High-efficiency DC-DC converters
- Power factor correction circuits
- Industrial motor drives
Procurement Notes
Verify the specific suffix F085 against official datasheets to confirm packaging details. Ensure compatibility with thermal management requirements for the TO-247-3 package. Confirm RoHS compliance status through manufacturer documentation prior to integration.
Selection Notes
Select this component for designs requiring low reverse recovery charge and high efficiency. Compare Rds(on) values at relevant gate voltages against circuit requirements. Consider thermal resistance characteristics for heat sink sizing in high-power environments.
Part Context
This part belongs to onsemi's SuperFET series, which combines trench MOSFET technology with integrated fast body diodes. The series targets high-performance power conversion needs where switching speed and conduction loss are critical design constraints.
Replacement Considerations
Check for direct equivalents within the same SuperFET family or comparable 600V N-channel MOSFETs from other manufacturers. Verify pinout compatibility and thermal interface dimensions before substitution.
