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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO-247
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60-F133 is an N-Channel SuperFET II MOSFET from onsemi, utilizing super-junction charge balance technology. It features a 600V drain-source voltage and a maximum continuous drain current of 47A at 25°C case temperature. The device offers a typical static drain-to-source on-resistance of 58mΩ and a total gate charge of 210nC at 10V. Packaged in a TO-247-3LD tube with 30 units per packing method, it supports a junction temperature range of -55 to +150°C.
Feature Summary
- Super-junction technology for low conduction loss and superior switching performance
- High avalanche energy capability with 100% avalanche testing
- Ultra-low gate charge for efficient drive requirements
- Low effective output capacitance for reduced switching losses
Applications
- Telecom and server power supplies
- Industrial power supplies
- PFC circuits
- FPD TV power applications
- ATX power supplies
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets RoHS compliance standards and lead-free specifications as documented in the official datasheet. Ensure the package type aligns with the intended thermal management design constraints.
Selection Notes
Select this component for high-voltage switching applications requiring low on-resistance and fast switching speeds. Evaluate the thermal resistance characteristics against the expected operating environment. Consider the avalanche energy rating for inductive load protection requirements.
Part Context
This part belongs to the SuperFET II family, representing onsemi's first generation of high-voltage super-junction MOSFETs. The series focuses on minimizing conduction loss while providing improved dv/dt rates and higher avalanche energy tolerance compared to standard planar technologies.
Replacement Considerations
Direct replacements include the FCH47N60 and FCH47N60_F133 variants which share identical electrical specifications and pinout configurations within the same product family.
