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Product Detailed Parameters
- Description：MOSFET N-CH 600V 45.8A TO247-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：45.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：157 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6120 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：368W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60NF is a single N-channel Power MOSFET manufactured by onsemi, utilizing SupreMOS technology. It features a 600V drain-source breakdown voltage and a continuous drain current of 45.8A at case temperature. The device exhibits a maximum on-resistance of 65mΩ at 10V gate drive. Designed for high-power applications, it supports a maximum power dissipation of 368W under thermal case conditions. The component is housed in a TO-247 package with a flange mount configuration.
Feature Summary
- SupreMOS technology integration for optimized switching performance
- High avalanche energy capability for robust operation
- Flange mount construction for efficient heat dissipation
Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and compliance status. Confirm RoHS and REACH adherence against current regulatory requirements. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high voltage handling and significant current capacity in a through-hole format. Evaluate thermal management strategies to maintain junction temperatures within safe operating limits during continuous conduction. Ensure gate drive voltages align with the specified threshold and maximum ratings for optimal efficiency.
Part Context
This part belongs to the SupreMOS family from onsemi, designed for high-efficiency power switching. It represents a legacy product line often utilized in established industrial equipment. Engineers may encounter this component when maintaining or upgrading existing hardware architectures that rely on proven silicon MOSFET solutions.
Replacement Considerations
Consider the FCH47N60N as a potential alternative if pin compatibility and electrical parameters match the design requirements. Verify package dimensions and thermal resistance values to ensure seamless integration without modifying the printed circuit board layout.
