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Product Detailed Parameters
- Description：MOSFET N-CH 600V 76A TO247-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：285 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：12385 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：543W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH76N60N is an N-channel enhancement mode MOSFET belonging to the SupreMOS series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 76 A at case temperature. The device has a maximum on-resistance of 36 mΩ at Vgs=10V, with a typical gate charge of 218 nC. It operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 543 W in a TO-247 package.
Feature Summary
- High-voltage capability with 600 V breakdown rating
- Low on-resistance for efficient power conduction
- Enhanced switching performance via optimized gate charge
- Robust thermal dissipation for high-power applications
Applications
- Industrial motor drives
- Power supply inverters
- High-frequency switching circuits
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions match specific lot codes. Ensure storage conditions comply with moisture sensitivity levels. Validate RoHS compliance status for regulatory requirements. Cross-reference ordering suffixes to confirm exact pinout and packaging specifications before procurement.
Selection Notes
Select this component when high voltage isolation and low conduction losses are critical. Evaluate thermal management requirements against the 543 W dissipation limit. Compare gate charge values for switching speed optimization. Ensure drive circuitry supports the required Vgs threshold. Consider package compatibility for PCB layout constraints.
Part Context
Part of the SupreMOS family designed for high-efficiency power switching. Utilizes advanced planar technology to reduce on-resistance while maintaining ruggedness. Suitable for demanding industrial environments requiring reliable high-current handling.
Replacement Considerations
Check pinout compatibility with existing designs. Verify voltage and current ratings meet or exceed original specifications. Assess thermal resistance differences for heat sink adequacy. Review gate charge variations for driver compatibility.
