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Product Detailed Parameters
- Description：MOSFET N-CH 650V 65A TO247
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4740 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCHD040N65S3-F155 is an N-channel Power MOSFET from onsemi's SUPERFET III series, designed for high-efficiency power systems. It features a 650V drain-source voltage and a typical on-resistance of 40mΩ at VGS=10V. The device utilizes advanced charge balance technology to achieve low gate charge and low effective output capacitance, reducing switching losses. It supports continuous current up to 65A and operates with junction temperatures up to 150°C.
Feature Summary
- SUPERFET III architecture with charge balance technology for optimized performance
- High dv/dt capability suitable for demanding switching applications
- AEC-Q101 qualified for automotive reliability standards
- Lead-free and halogen-free construction compliant with RoHS directives
Applications
- Automotive onboard chargers for HEV and EV systems
- Automotive DC/DC converters
- Industrial motor drives
- High-frequency power supplies
Procurement Notes
Verify the exact part number against official datasheets as the specific suffix may indicate package or tape-and-reel variations. Confirm AEC-Q101 qualification status if automotive application is required. Check for lead-free compliance documentation. Ensure sourcing channels provide original manufacturer traceability to avoid counterfeit components.
Selection Notes
Select this component for designs requiring high efficiency in compact power stages. The low RDS(on) minimizes conduction losses, while the low Qg reduces drive requirements. Consider thermal management capabilities given the 65A rating. Evaluate system voltage levels against the 650V breakdown to ensure adequate safety margins during operation.
Part Context
This MOSFET belongs to onsemi's SUPERFET III family, which integrates advanced trench gate and field plate technologies. The brand, formerly known as ON Semiconductor, focuses on energy-efficient solutions for automotive, industrial, and cloud markets. This series targets applications needing small form factors and high power density.
Replacement Considerations
Check for direct substitutes within the SUPERFET III lineup such as NVH040N65S3F or NVHL040N65S3F. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official cross-reference lists for validated alternatives.
