FCI11N60

Description：MOSFET N-CH 600V 11A I2PAK
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:9324117b3d8d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 11A I2PAK
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262 (I2PAK)
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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FCI11N60

Overview

The FCI11N60 is a 600V N-Channel MOSFET from the SuperFET family, utilizing charge balance technology for low on-resistance and gate charge. It features a typical RDS(on) of 0.32Ω at VGS=10V and ID=5.5A, with a maximum of 0.38Ω. The device supports a continuous drain current of 11A at TC=25°C and 7A at TC=100°C, with a pulsed current of 33A. Total gate charge is typically 40nC. Power dissipation is 125W at TC=25°C. Operating temperature range is -55°C to +150°C. It is housed in an I2PAK (TO-220AB equivalent) package.

Feature Summary

SuperFET technology employs advanced charge balance mechanisms to minimize conduction loss and enhance switching performance.
Capable of withstanding extreme dv/dt rates and high avalanche energy levels.
Designed for system miniaturization and higher efficiency in AC/DC power conversion applications.

Applications

AC/DC power conversion in switching mode operation
System miniaturization designs requiring high efficiency
Power supplies utilizing hard-switching topologies

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels to avoid counterfeit parts. Confirm RoHS compliance status and specific datasheet revision (Rev. A2) matches design requirements. Ensure thermal management aligns with the specified junction-to-case resistance of 1.0 °C/W for optimal performance within the -55°C to +150°C operating range.

Selection Notes

Select this component for applications demanding low conduction losses and robust avalanche ruggedness. The I2PAK package suits through-hole mounting where case temperature monitoring is feasible. Consider the 0.32Ω typical on-resistance for efficiency optimization. Verify that the 11A continuous current rating meets load requirements at the intended case temperature.

Part Context

This part belongs to the SuperFET series, representing Fairchild Semiconductor's proprietary generation of high-voltage MOSFETs. The series integrates charge balance architecture to achieve superior electrical characteristics compared to standard planar technologies. It targets general-purpose power switching environments requiring reliability and efficiency.