ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 38A 4TDFN
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 880µA
- Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2765 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：260W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-TDFN (8x8)
- Package / Case：4-PowerTSFN
Download product information
Overview
The FCMT080N65S3 is an N-channel enhancement mode power MOSFET from onsemi's SUPERFET III family, utilizing charge balance super-junction technology. It features a 650V drain-source voltage rating and a maximum continuous drain current of 38A at case temperature. The device offers a typical on-resistance of 80mΩ at VGS=10V and a typical gate charge of 49nC. Packaged in a compact 4-TDFN (8x8) surface-mount format, it supports operation between -55°C and +150°C junction temperature.
Feature Summary
- SUPERFET III charge balance technology for low on-resistance and gate charge
- High dv/dt capability for robust switching performance
- Compact 4-TDFN package for high power density applications
Applications
- Industrial motor drives
- Solar inverters
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific suffix and tape/reel configuration against the official datasheet to ensure compatibility with automated assembly processes. Confirm thermal resistance values and mounting requirements for your specific PCB layout to guarantee reliable operation within the specified temperature range.
Selection Notes
Select this component when a low-profile surface-mount solution is required for high-voltage applications. The 80mΩ RDS(on) balances conduction losses with switching efficiency. Ensure the design accounts for the 38A current rating at case temperature rather than ambient conditions.
Part Context
This part belongs to the SUPERFET III series, representing onsemi's advanced silicon super-junction technology. It succeeds earlier generations by offering improved figure-of-merit through reduced gate charge and output capacitance, enabling higher frequency operation in power conversion systems.
Replacement Considerations
Direct pin-compatible replacements may include other 650V 80mΩ TDFN-4 devices from the same manufacturer family, such as the FCMT125N65S3 for lower current requirements or FCMT060N65S3 if available and verified for identical footprint and electrical characteristics.
