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Product Detailed Parameters
- Description：MOSFET N-CH 650V 30A POWER88
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2270 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Power88
- Package / Case：4-PowerTSFN
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Overview
The FCMT099N65S3 is a N-channel enhancement mode MOSFET from onsemi's SUPERFET III family, utilizing high-voltage super-junction technology. It features a 650V drain-source voltage rating and an 87mΩ typical on-resistance at VGS=10V. The device supports a continuous drain current of 24A and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a typical gate charge of 56nC and a power dissipation capacity of 227W in the PQFN-8 package.
Feature Summary
- Super-junction architecture for low conduction losses
- Optimized gate charge for efficient switching
- High dv/dt capability
- EMI reduction through easy drive design
Applications
- Telecommunications server power supplies
- Industrial power conversion systems
- Uninterruptible power supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix and packaging configuration against the official datasheet before ordering. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability documentation. Cross-reference the part number with the manufacturer's latest release notes to confirm availability status.
Selection Notes
Select this component for applications requiring high efficiency in medium-power switching environments. The low gate charge reduces driver complexity and switching losses. The PQFN-8 package offers thermal performance suitable for compact designs. Evaluate thermal management requirements based on the 227W power dissipation rating under expected operating conditions.
Part Context
This device belongs to the SUPERFET III series, representing onsemi's advanced high-voltage super-junction MOSFET technology. The series focuses on balancing low on-resistance with minimal gate charge to enhance overall system efficiency. This generation improves upon previous iterations by offering better switching performance and robustness against high dv/dt stress events.
Replacement Considerations
Direct replacements must match the 650V rating, N-channel configuration, and PQFN-8 footprint. Verify that substitute parts offer comparable RDS(on) and Qg values to maintain circuit efficiency. Check pinout compatibility to ensure seamless integration without PCB redesign.
